Acta Metallurgica Sinica(English letters) ›› 2009, Vol. 16 ›› Issue (3): 103-107.doi: 10.1016/S1005-8885(08)60234-4

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Design of 1.9 GHz RF CMOS VCO

LI En-ling, WANG Xue, SONG Lin-hong, YUAN Yong-xia, YU Fa-da, LIU Man-cang   

  1. School of Sciences, Xi’an University of Technology, Xi’an 710048, China
  • Received:1900-01-01 Revised:1900-01-01 Online:2009-06-30
  • Contact: LI En-ling

Abstract:

A voltage controlled oscillator (VCO) module is designed, which can be used for the third generation mobile communication (3G) system. The circuit is simulated by spectre radio frequency (RF) by TSMC 0.25 μm CMOS process. During the simulation, the performance parameters of the designed VCO are as follows: tuning range 1.804 GHz–2.039 GHz, phase noise 136.457 dBc/Hz @1 MHz, 146.045 dBc/Hz@3 MHz, supply voltage 2.5 V, voltage output rate of 0.8 V–2.6 V, power consumption 25 mW. The layout of the related circuit is drawn by the Virtuoso Layout Editor.

Key words:

LC voltage controlled oscillator;on-chip inductor;on-chip varactor;phase noise